Impact of random dopant fluctuation effect on surrounding gate MOSFETs: from atomic level simulation to circuit performance evaluation

Author

Wang, Hao ; Ma, Chenyue ; Zhang, Chenfei ; He, Frank ; Zhang, Xing ; Lin, Xinnan

Author_Institution

Key Lab. of Integrated Microsyst., Peking Univ., Shenzhen, China

fYear

2010

Firstpage

1136

Lastpage

1137

Abstract

This paper investigates the impact of random dopant fluctuation effect on surrounding gate MOSFET, from atomic statistical simulation of device to circuit performance evaluation. The doping profile is generated by an analysis of each lattice atom and then the threshold voltage variation is obtained by device drift-diffusion simulation. Then the circuit performance evaluation is performed by feeding the result into a surrounding-gate MOSFET model. It is shown that a significant fluctuation in threshold voltage is due to the decreasing volume. The circuit simulation results also reveal that a surrounding gate MOSFET based 6-T SRAM presents a promising resistibility to noise disturbance.

Keywords

MOSFET; SRAM chips; circuit simulation; doping profiles; fluctuations; semiconductor device models; 6-T SRAM; atomic level simulation; atomic statistical simulation; circuit performance evaluation; circuit simulation; doping profile; drift-diffusion simulation; random dopant fluctuation effect; surrounding gate MOSFET model; Analytical models; Circuit optimization; Circuit simulation; Doping profiles; Fluctuations; Lattices; MOSFETs; Performance evaluation; Semiconductor process modeling; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2010 3rd International

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-3543-2

Electronic_ISBN

978-1-4244-3544-9

Type

conf

DOI

10.1109/INEC.2010.5424986

Filename

5424986