Synthesis of size- and site-controlled SiGe nanorods on epitaxial Si0.8Ge0.2 virtual substrates

Author

Cheng, Shao-Liang ; Chung, Cheng-Hsuan ; Lee, Sheng-Wei

Author_Institution

Dept. of Chem. & Mater. Eng., Nat. Central Univ., Chungli, Taiwan

fYear

2010

Firstpage

1142

Lastpage

1143

Abstract

Two-dimensional (2D) periodic arrays of vertically-aligned SiGe nanorods were successfully produced on (001)Si_0.8Ge_0.2 virtual substrates by using the polystyrene (PS) nanosphere lithography technique and selective metal-catalytic etching method. The diameter and site of the produced SiGe nanorods were controlled by the RIE-trimmed PS spheres mask used. TEM and electron diffraction analyses results clearly reveal that all the produced SiGe nanorods were perfectly single crystals and their axial orientations were along the [001] direction. TEM/EDS analysis further confirmed that the nanorods produced were pure SiGe nanorods.

Keywords

Ge-Si alloys; electron diffraction; etching; nanolithography; nanostructured materials; semiconductor materials; transmission electron microscopy; (001)Si_0.8Ge_0.2 virtual substrates; O₂ plasma reactive ion etching; Si_0.8Ge_0.2; SiGe; TEM analysis; [001] direction; electron diffraction; epitaxial virtual substrates; polystyrene nanosphere lithography technique; selective metal-catalytic etching method; site-controlled nanorods; vertically-aligned nanorod two-dimensional periodic arrays; Chemical engineering; Cities and towns; Crystals; Etching; Germanium silicon alloys; Lithography; Materials science and technology; Nanowires; Silicon germanium; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2010 3rd International

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-3543-2

Electronic_ISBN

978-1-4244-3544-9

Type

conf

DOI

10.1109/INEC.2010.5424989

Filename

5424989