Title :
Synthesis of size- and site-controlled SiGe nanorods on epitaxial Si0.8Ge0.2 virtual substrates
Author :
Cheng, Shao-Liang ; Chung, Cheng-Hsuan ; Lee, Sheng-Wei
Author_Institution :
Dept. of Chem. & Mater. Eng., Nat. Central Univ., Chungli, Taiwan
Abstract :
Two-dimensional (2D) periodic arrays of vertically-aligned SiGe nanorods were successfully produced on (001)Si0.8Ge0.2 virtual substrates by using the polystyrene (PS) nanosphere lithography technique and selective metal-catalytic etching method. The diameter and site of the produced SiGe nanorods were controlled by the RIE-trimmed PS spheres mask used. TEM and electron diffraction analyses results clearly reveal that all the produced SiGe nanorods were perfectly single crystals and their axial orientations were along the [001] direction. TEM/EDS analysis further confirmed that the nanorods produced were pure SiGe nanorods.
Keywords :
Ge-Si alloys; electron diffraction; etching; nanolithography; nanostructured materials; semiconductor materials; transmission electron microscopy; (001)Si0.8Ge0.2 virtual substrates; O2 plasma reactive ion etching; Si0.8Ge0.2; SiGe; TEM analysis; [001] direction; electron diffraction; epitaxial virtual substrates; polystyrene nanosphere lithography technique; selective metal-catalytic etching method; site-controlled nanorods; vertically-aligned nanorod two-dimensional periodic arrays; Chemical engineering; Cities and towns; Crystals; Etching; Germanium silicon alloys; Lithography; Materials science and technology; Nanowires; Silicon germanium; Substrates;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424989
