Title :
Variable range hopping conduction in n-Si NWs with focus-ion-beam-induced amorphization
Author :
Ke, Jr-Jian ; He, Jr-Hau
Author_Institution :
Dept. of Electr. Eng., Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
The galvanic wet etching was adopted to fabricate single-crystalline Si nanowires (NWs) at room temperature in HF/AgNO3 solution. The focus-ion-beam (FIB) direct-write technology was employed to connect the Si NW and Cr/Au electrode. The microstructure and morphology was studied in details, it demonstrates that the amorphization of Si NWs due to the irradiation of focused Ga ion beams. Temperature dependence of conductivity of an individual Si NW is investigated at the temperature ranges from 105 K to 390 K. The Mott´s variable-range hopping (Mott-VRH) model is applied to the conduction due to disorder effect caused by FIB-Pt. Mott´s parameters of Si NWs, such as hopping energy, hopping distance and density of states have been estimated.
Keywords :
amorphisation; electronic density of states; elemental semiconductors; focused ion beam technology; hopping conduction; ion beam effects; nanowires; semiconductor quantum wires; silicon; Mott variable-range hopping model; Si; amorphization; conductivity; density of states; disorder effect; focus-ion-beam direct-write technology; focused ion beam irradiation; galvanic wet etching; hopping distance; hopping energy; microstructure; morphology; room temperature; single-crystalline nanowires; temperature 105 K to 390 K; variable range hopping conduction; Chromium; Electrodes; Galvanizing; Gold; Hafnium; Microstructure; Morphology; Nanowires; Temperature dependence; Wet etching;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424990
