• DocumentCode
    1669378
  • Title

    Fabrication of the SnO2/Al2O3 catalysts through electrospinning

  • Author

    Li, Quanxiang ; Kang, Weimin ; Cheng, Bowen ; Ren, Yuanlin ; Bai, Xue

  • Author_Institution
    Tianjin Municipal Key Lab. of Fiber Modification & Functional Fiber, Tianjin Polytech. Univ., Tianjin, China
  • fYear
    2010
  • Firstpage
    521
  • Lastpage
    522
  • Abstract
    SnO2/Al2O3 nanofibers have been fabricated from a suitable inorganic-organic composite solution via a simple electrospinning method and followed by calcination treatment of the electrospun polymer/inorganic composite fibers. The effect of voltage, tip-to-collector distance and calcining temperature on the morphology and crystal structure of nanofibres was investigated by scanning electron microscope (SEM), X-ray photoelectron spectra (XPS) and X-ray diffraction (XRD). The diameter and diameter distribution of nanofibers can be controlled by controlling the electrospinning parameters and the more ideal diameter is 200-350nm. The formation of phase identified by XRD indicated the existence of tetragonal rutile tin oxide crystals and amorphous alumina. This paper provides a new method for the preparation of the SnO2/Al2O3 catalysts for NOX reduction.
  • Keywords
    X-ray diffraction; X-ray photoelectron spectra; alumina; calcination; catalysts; composite materials; crystal morphology; electrospinning; nanofabrication; nanofibres; polymers; scanning electron microscopes; tin compounds; titanium compounds; SnO2-Al2O3; TiO2; X-ray diffraction; X-ray photoelectron spectra; amorphous alumina; calcination treatment; catalysts; crystal morphology; crystal structure; electrospinning; inorganic-organic composite solution; nanofabrication; nanofibers; polymer/inorganic composite fibers; scanning electron microscope; tetragonal rutile; tin oxide crystals; Calcination; Fabrication; Morphology; Nanostructures; Photoelectron microscopy; Polymers; Scanning electron microscopy; Temperature; Voltage; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2010 3rd International
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-3543-2
  • Electronic_ISBN
    978-1-4244-3544-9
  • Type

    conf

  • DOI
    10.1109/INEC.2010.5424991
  • Filename
    5424991