HBT power MMIC development at GMMT

Author

McCullagh, M.J. ; Roberts, N.B.

Author_Institution

GEC-Marconi Mater. Technol. Ltd., Towcester, UK

fYear

1996

fDate

1/25/1996 12:00:00 AM

Firstpage

42370

Lastpage

42374

Abstract

Power MMICs at frequencies from DC to 12 GHz have been designed on GMMT´s GaAs/GaInP HBT process. Typical circuits include power Darlingtons for wideband microwave instrumentation, X-band amplifiers for phased array radar and L-band amplifiers for wireless communications. The key advantages of the GaAs HBT for these applications include high frequency performance (fmax>50 GHz), high efficiency, good linearity, high output power density, high gain per stage, no negative power supplies and good low frequency noise performance

Keywords

III-V semiconductors; MMIC power amplifiers; bipolar MMIC; gallium arsenide; heterojunction bipolar transistors; indium compounds; instrumentation amplifiers; integrated circuit design; integrated circuit noise; wideband amplifiers; 0 to 12 GHz; 50 GHz; GEC-Marconi Materials Technology; GaAs-GaInP; GaAs/GaInP HBT process; HBT power MMIC; L-band amplifiers; X-band amplifiers; high efficiency; high frequency performance; high gain per stage; linearity; low frequency noise performance; output power density; phased array radar; power Darlingtons; wideband microwave instrumentation; wireless communications;

fLanguage

English

Publisher

iet

Conference_Titel

Solid State Power Amplification and Generation, IEE Colloquium on

Conference_Location

London

Type

conf

DOI

10.1049/ic:19960057

Filename

499959