Title :
Comparison of gate structures for short-channel SOI MOSFETs
Author :
Park, J.-T. ; Colinge, C.A. ; Colinge, J.-P.
Author_Institution :
Dept. of Electron. Eng., Inchon Univ., South Korea
Abstract :
This paper compares the merits of different "multiple-gate" SOI MOSFET structures in terms of short-channel effects and current drive. It is found that, in general, the higher the number of gates, the better the device characteristics. A new gate structure, called the "Pi gate" is introduced. This gate structures offers properties close to those of a quadruple-gate device.
Keywords :
MOSFET; silicon-on-insulator; Si; current drive; gate structures comparison; multiple-gate structures; quadruple-gate device; short-channel SOI MOSFET; CMOS process; Degradation; Drives; Electrodes; MOSFETs; Manufacturing processes; Shape; Silicon on insulator technology; Transconductance; Transistors;
Conference_Titel :
SOI Conference, 2001 IEEE International
Conference_Location :
Durango, CO, USA
Print_ISBN :
0-7803-6739-1
DOI :
10.1109/SOIC.2001.958013
