DocumentCode :
1669649
Title :
Bound magnetic polarons induced ferromagnetism in transition-metal-doped oxide nanostructures
Author :
Xing, G.Z. ; Yi, J.B. ; Wang, D.D. ; Liao, L. ; Yu, T. ; Shen, Z.X. ; Huan, G. H A ; Sum, T.C. ; Ding, J. ; Wu, T.
Author_Institution :
Sch. of Phys. & Math. Sci., Nanyang Technol. Univ., Singapore, Singapore
fYear :
2010
Firstpage :
1120
Lastpage :
1121
Abstract :
One dimensional (1D) oxide nanostructures such as nanowires (NWs) are strategically important for both basic science and technological applications. These emerging nanomaterials have demonstrated superb physical properties. In particular, nanowires of wide band gap semiconductors are promising as building blocks in optoelectronic and transparent electronics, and doping with transition metals can result in ferromagnetism. Here we report on the synthesis of ZnO, In2O3 nanostructures and their doped counterparts. Their physical properties have been measured systematically and they show great potential in electronic and spintronic applications.
Keywords :
II-VI semiconductors; ferromagnetism; indium compounds; magnetic polarons; magnetoelectronics; nanowires; wide band gap semiconductors; zinc compounds; 1D oxide nanostructures; In2O3; ZnO; bound magnetic polarons; ferromagnetism; nanomaterials; nanowires; optoelectronics; physical properties; spintronic applications; transition metal doping; transition-metal-doped oxide nanostructures; transparent electronics; wide band gap semiconductors; Chemical technology; Doping; Magnetic force microscopy; Magnetoelectronics; Nanomaterials; Nanowires; Physics; Semiconductor nanostructures; Temperature; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
Type :
conf
DOI :
10.1109/INEC.2010.5425000
Filename :
5425000
Link To Document :
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