DocumentCode
1669649
Title
Bound magnetic polarons induced ferromagnetism in transition-metal-doped oxide nanostructures
Author
Xing, G.Z. ; Yi, J.B. ; Wang, D.D. ; Liao, L. ; Yu, T. ; Shen, Z.X. ; Huan, G. H A ; Sum, T.C. ; Ding, J. ; Wu, T.
Author_Institution
Sch. of Phys. & Math. Sci., Nanyang Technol. Univ., Singapore, Singapore
fYear
2010
Firstpage
1120
Lastpage
1121
Abstract
One dimensional (1D) oxide nanostructures such as nanowires (NWs) are strategically important for both basic science and technological applications. These emerging nanomaterials have demonstrated superb physical properties. In particular, nanowires of wide band gap semiconductors are promising as building blocks in optoelectronic and transparent electronics, and doping with transition metals can result in ferromagnetism. Here we report on the synthesis of ZnO, In2O3 nanostructures and their doped counterparts. Their physical properties have been measured systematically and they show great potential in electronic and spintronic applications.
Keywords
II-VI semiconductors; ferromagnetism; indium compounds; magnetic polarons; magnetoelectronics; nanowires; wide band gap semiconductors; zinc compounds; 1D oxide nanostructures; In2O3; ZnO; bound magnetic polarons; ferromagnetism; nanomaterials; nanowires; optoelectronics; physical properties; spintronic applications; transition metal doping; transition-metal-doped oxide nanostructures; transparent electronics; wide band gap semiconductors; Chemical technology; Doping; Magnetic force microscopy; Magnetoelectronics; Nanomaterials; Nanowires; Physics; Semiconductor nanostructures; Temperature; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-3543-2
Electronic_ISBN
978-1-4244-3544-9
Type
conf
DOI
10.1109/INEC.2010.5425000
Filename
5425000
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