DocumentCode :
1669690
Title :
Magnetostrictive properties of amorphous TbFe/FeB multilayer thin films by DC magnetron sputtering
Author :
Wang, Wei ; Mi, Yiming ; Qian, Shiqiang ; Zhou, Xiying
Author_Institution :
Sch. of Mater. Eng., Shanghai Univ. of Eng. Sci., Shanghai, China
fYear :
2010
Firstpage :
1124
Lastpage :
1125
Abstract :
Magnetostrictive multilayer films which consists of amorphous TbFe and FeB were prepared by dc magnetron sputtering onto glass substrates. The structure, magnetic and magnetostrictive properties of TbFe/FeB multilayer thin films were investigated at different annealing temperatures. The results reveal that the soft magnetic and magnetostrictive properties for TbFe/FeB multilayer thin films compared to TbFe single layer thin films were obviously improved. In comparison to the intrinsic coercivity JHc of 59.2 kA/m for TbFe single layer thin films, the intrinsic coercivity JHc for TbFe/FeB multilayer thin films rapidly drops to 27.3 kA/m. After annealing at 350°C for 60 min, the maximum saturation magnetostrictive coefficient of ¿s = 410 × 10-6 was obtained. The best low-field magnetostrictive coefficient could reach to 177 × 10-6 under 40 kA/m external magnetic field for the TbFe/FeB multilayer thin films after annealing at 250°C for 60 min.
Keywords :
amorphous magnetic materials; annealing; boron alloys; coercive force; iron alloys; magnetic multilayers; magnetic thin films; magnetostriction; soft magnetic materials; sputtered coatings; terbium alloys; DC magnetron sputtering; TbFe-FeB; amorphous multilayer thin films; annealing temperatures; glass substrates; intrinsic coercivity; low-field magnetostrictive coefficient; saturation magnetostrictive coefficient; soft magnetic property; temperature 250 degC; temperature 350 degC; time 60 min; Amorphous magnetic materials; Amorphous materials; Annealing; Magnetic films; Magnetic multilayers; Magnetic properties; Magnetostriction; Saturation magnetization; Soft magnetic materials; Sputtering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
Type :
conf
DOI :
10.1109/INEC.2010.5425002
Filename :
5425002
Link To Document :
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