DocumentCode
1669750
Title
An 80GHz travelling-wave amplifier in a 90nm CMOS technology
Author
Liu, Ren-Chieh ; Wang, To-Po ; Lu, Liang-Hung ; Wang, Huei ; Wang, Sung-Hsiung ; Chao, Chih-Ping
Author_Institution
Nat. Taiwan Univ., Taipei, Taiwan
fYear
2005
Firstpage
154
Abstract
A 6-stage travelling wave amplifier (TWA) implemented in a bulk 90nm CMOS technology is presented. By utilizing gate-line capacitive division and low-loss coplanar waveguides, the fabricated TWA exhibits 7.4dB gain with a 3dB bandwidth of 80GHz while maintaining input and output return losses better than 8dB from dc to 100GHz. A GBW of 190GHz is achieved.
Keywords
CMOS integrated circuits; coplanar waveguides; millimetre wave amplifiers; travelling wave amplifiers; 190 GHz; 7.4 dB; 90 nm; CMOS technology; TWA; gate-line capacitive division; low-loss coplanar waveguides; travelling-wave amplifier; Bandwidth; CMOS technology; Coplanar waveguides; Couplings; Cutoff frequency; Gain measurement; Loss measurement; MOSFETs; Power transmission lines; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. 2005 IEEE International
Conference_Location
San Francisco, CA
ISSN
0193-6530
Print_ISBN
0-7803-8904-2
Type
conf
DOI
10.1109/ISSCC.2005.1493915
Filename
1493915
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