• DocumentCode
    1669774
  • Title

    A 1.8V three-stage 25GHz 3dB-BW differential non-uniform downsized distributed amplifier

  • Author

    Yazdi, Ahmad ; Lin, Denis ; Heydari, Payam

  • Author_Institution
    California Univ., Irvine, CA, USA
  • fYear
    2005
  • Firstpage
    156
  • Abstract
    A three-stage nonuniform downsized distributed amplifier is realized in a 0.18μm SiGe process, using CMOS transistors only. The amplifier achieves the differential forward gain of 7.8dB over a 25GHz bandwidth and an IIP3 of +4.7dBm. The 1.025×1.29mm2 chip dissipates 54mW from a 1.8V supply.
  • Keywords
    CMOS integrated circuits; Ge-Si alloys; differential amplifiers; distributed amplifiers; 0.18 micron; 1.8 V; 25 GHz; 54 mW; 7.8 dB; CMOS transistors; Ge-Si; SiGe process; downsized distributed amplifier; three-stage nonuniform amplifier; Attenuation; Bandwidth; Circuit topology; Cutoff frequency; Distributed amplifiers; Inductors; Performance gain; Performance loss; Transfer functions; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. 2005 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0193-6530
  • Print_ISBN
    0-7803-8904-2
  • Type

    conf

  • DOI
    10.1109/ISSCC.2005.1493916
  • Filename
    1493916
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1669774