Title :
A 1.8V three-stage 25GHz 3dB-BW differential non-uniform downsized distributed amplifier
Author :
Yazdi, Ahmad ; Lin, Denis ; Heydari, Payam
Author_Institution :
California Univ., Irvine, CA, USA
Abstract :
A three-stage nonuniform downsized distributed amplifier is realized in a 0.18μm SiGe process, using CMOS transistors only. The amplifier achieves the differential forward gain of 7.8dB over a 25GHz bandwidth and an IIP3 of +4.7dBm. The 1.025×1.29mm2 chip dissipates 54mW from a 1.8V supply.
Keywords :
CMOS integrated circuits; Ge-Si alloys; differential amplifiers; distributed amplifiers; 0.18 micron; 1.8 V; 25 GHz; 54 mW; 7.8 dB; CMOS transistors; Ge-Si; SiGe process; downsized distributed amplifier; three-stage nonuniform amplifier; Attenuation; Bandwidth; Circuit topology; Cutoff frequency; Distributed amplifiers; Inductors; Performance gain; Performance loss; Transfer functions; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. 2005 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-8904-2
DOI :
10.1109/ISSCC.2005.1493916
