Study of relevance of the SIMOX defect type on yield of radiation-tolerant device test structures

Author

Anc, M.J. ; Allen, L.P. ; Alles, M.L. ; Dolan, R.P. ; Liu, S.T. ; Sullwold, J.G. ; Gostein, M. ; Banet, M.

Author_Institution

Ibis Technol. Corp., Danvers, MA, USA

fYear

2001

Firstpage

129

Lastpage

130

Abstract

We studied the relevance of the SIMOX defect type on the operation of radiation tolerant device test structures. Fabrication of the devices was preceded by extensive characterization of the substrates including novel non-destructive techniques. The overall results have shown good yield and BOX hardness obtained in standard dose SIMOX material with the low density of light point defects (HF defects included). The 170 nm BOX was found only radiation tolerant. The yet insufficiently reduced density of silicon inclusions in the medium dose buried oxide SIMOX was found to be the major limiting factor of the hardness.

Keywords

CMOS memory circuits; SIMOX; SRAM chips; inclusions; integrated circuit reliability; point defects; radiation hardening (electronics); substrates; BOX hardness; CMOS SRAM test structures chip; HF defects; SIMOX defect type; characterization; fabrication; light point defects; medium dose buried oxide; nondestructive techniques; radiation-tolerant device test structures; silicon inclusions; substrates; yield; CMOS technology; Circuits; Fabrication; Hafnium; Light scattering; MOS devices; MOSFETs; Random access memory; Silicon; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2001 IEEE International

Conference_Location

Durango, CO, USA

ISSN

1078-621X

Print_ISBN

0-7803-6739-1

Type

conf

DOI

10.1109/SOIC.2001.958020

Filename

958020