Intelligent processing model for the design of multi-parameters microelectronics systems [In2O3 film growth]

An intelligent processing model for the design of a multi-parameter microelectronics system was developed and tested on highly conductive transparent indium oxide (In₂O₃) thin films. The films were prepared by DC magnetron sputtering using indium oxide targets in a pure Argon (Ar) atmosphere. The developed method of Random Partial Sections was applied to the design and optimization of the technological process. The physical model of the sputtering procedure was based on random sections of the parameter space. The processing model was optimized by the Steep Rise method, using the mathematical model gradient to obtain optimal processing parameters. Active physical parameters of the sputtering process were all independent of each other, e.g. Ar pressure, substrate temperature, target voltage, deposition period. As a result of optimization, the indium oxide thin films displayed a transparency at 550 nm wavelength of 90.7% (including the glass substrate with an absolute transparency of 91.08%), and a resistivity of up to 0.043 Ω·cm for a 2500 Å thick film