• DocumentCode
    1669910
  • Title

    Comparison of bulk vs SOI for low power low voltage CMOS imager

  • Author

    Afzalian, Aryan ; Delatte, P. ; Legat, J.-D. ; Flandre, D.

  • Author_Institution
    Lab. de Microelectronique, Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium
  • fYear
    2001
  • Firstpage
    133
  • Lastpage
    134
  • Abstract
    To compare bulk silicon and SOI technologies in the field of CMOS image sensors, the authors have developed an analytical model of an APS circuit and applied it to the design of a 50 frames per second 512x512 pixels imager.
  • Keywords
    CMOS image sensors; elemental semiconductors; integrated circuit design; integrated circuit modelling; low-power electronics; silicon; silicon-on-insulator; 262144 pixel; 512 pixel; APS circuit; CMOS image sensors; SOI; Si-SiO/sub 2/; analytical model; bulk silicon; low power low voltage CMOS imager; Circuit noise; Low voltage; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2001 IEEE International
  • Conference_Location
    Durango, CO, USA
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-6739-1
  • Type

    conf

  • DOI
    10.1109/SOIC.2001.958022
  • Filename
    958022
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1669910