DocumentCode
1669913
Title
Investigations on growth and hydrogen gas sensing property of ZnO nanowires prepared by hydrothermal growth
Author
Kim, Jung-Hyun ; Kang, Dong-Suk ; Hong, Soon-Ku ; Kim, Hyojin ; Kim, Dojin ; Lee, Jae Wook ; Lee, Jeong Yong
Author_Institution
Dept. of Adv. Mater. Eng., Chungnam Nat. Univ., Daejeon, South Korea
fYear
2010
Firstpage
1096
Lastpage
1097
Abstract
Very narrow ZnO nanowires are synthesized on the sputtered ZnO seed layer by hydrothermal growth method. Varying the growth parameters we can obtain several features of ZnO nanowire. The nanowires with a diameter of about 15 nm and with a length longer than 5 ¿m are grown, which are much narrower than ZnO nanowires grown by chemical vapor deposition. The underlying ZnO seed layer enhanced the nucleation of ZnO nanowire during the followed ZnO synthesis by hydrothermal growth but without the seed layer, ZnO grown randomly as a rod shape. The molar ratio of the source is critical to the shape of the ZnO nanowire. Crystal orientation of ZnO nanowire is investigated by X-ray ¿-2¿ diffraction and microstructure of the ZnO nanowire is examined by transmission electron microscopy. Hydrogen-gas sensing property is measured and compared from the synthesized ZnO nanowires.
Keywords
II-VI semiconductors; X-ray diffraction; chemical vapour deposition; crystal growth from solution; crystal microstructure; crystal orientation; gas sensors; hydrogen; nucleation; semiconductor quantum wires; transmission electron microscopy; wide band gap semiconductors; zinc compounds; X-ray ¿-2¿ diffraction; ZnO; chemical vapor deposition; crystal orientation; hydrogen gas sensing property; hydrothermal growth; microstructure; nanowires; nucleation; sputtered seed layer; transmission electron microscopy; Chemical vapor deposition; Hydrogen; Materials science and technology; Mercury (metals); Molecular beam epitaxial growth; Nanowires; Shape; Temperature; Water; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-3543-2
Electronic_ISBN
978-1-4244-3544-9
Type
conf
DOI
10.1109/INEC.2010.5425010
Filename
5425010
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