Title :
High-stability 72 GHz Gunn oscillator for the characterization of ultra-high-speed optical receivers based on InP and InSb Schottky diodes
Author :
Galzerano, G. ; Svelto, C. ; Carelli, G. ; Beverini, N. ; Moretti, A. ; Finotti, M. ; Bava, E.
Author_Institution :
Dipt. di Elettronica e Informazione, Politecnico di Milano, Milan, Italy
fDate :
6/24/1905 12:00:00 AM
Abstract :
A high-stability 72 GHz Gunn oscillator, to be used as a frequency standard, was realized in order to characterize ultra-high-speed Schottky diodes based on intrinsic InP and InSb semiconductors. The 72 GHz oscillator shows a relative frequency stability of 2×10-9 for observation times of 10 s and a collapse frequency of 4 THz.
Keywords :
Gunn oscillators; III-V semiconductors; Schottky diodes; frequency stability; frequency standards; indium compounds; millimetre wave oscillators; optical receivers; semiconductor device measurement; 10 s; 4 THz; 72 GHz; InP; InSb; Schottky diodes; frequency measurements; frequency standard; high-stability Gunn oscillator; intrinsic InP semiconductors; intrinsic InSb semiconductors; oscillator collapse frequency; oscillator relative frequency stability; ultra-high-speed Schottky diodes; ultra-high-speed optical receivers; Bandwidth; Frequency measurement; Gunn devices; Indium phosphide; Measurement standards; Optical receivers; Oscillators; Schottky diodes; Stability; Surface acoustic waves;
Conference_Titel :
Instrumentation and Measurement Technology Conference, 2002. IMTC/2002. Proceedings of the 19th IEEE
Print_ISBN :
0-7803-7218-2
DOI :
10.1109/IMTC.2002.1007117
