Title :
Characteristics of RF power amplifiers by 0.5 /spl mu/m SOS CMOS process
Author :
Sang Lam ; Wing-Hung Ki ; Mansun Chan
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Tech, China
Abstract :
The properties of RF power amplifier constructed by SOS MOSFET have been investigated. Before soft breakdown, the floating body effect has minimal impact on the gain of the power amplifier, and the performance is comparable to recently reported high gain bulk power MOSFET and power SOI LDMOS. Only at high V/sub DD/ that LDMOS structure with body contact is required to reduce the soft breakdown. As a result, the simple SOS CMOSFET structure is more than sufficient for low power applications such as Bluetooth. The measurement results of the SOS MOSFETs in various power amplifier configurations (Class A, B, C) are presented.
Keywords :
CMOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; silicon-on-insulator; 1 GHz; Bluetooth; DC characteristic; DC kink; RF power amplifier; SOS CMOS process; Si-Al/sub 2/O/sub 3/; floating body effect; high frequency characteristics; input-output power characteristics; large signal power measurements; low power applications; reduced parasitic capacitance; soft breakdown; Bluetooth; CMOSFETs; Electric breakdown; High power amplifiers; MOSFET circuits; Performance gain; Power MOSFET; Power amplifiers; Radio frequency; Radiofrequency amplifiers;
Conference_Titel :
SOI Conference, 2001 IEEE International
Conference_Location :
Durango, CO, USA
Print_ISBN :
0-7803-6739-1
DOI :
10.1109/SOIC.2001.958026
