DocumentCode
1670056
Title
Reconsideration of off-leakage current estimation of sub-100-nm SOI MOSFETs and device selection for applications
Author
Ynagi, S.-I. ; Omura, Y.
Author_Institution
Fac. of Eng., Kansai Univ., Osaka, Japan
fYear
2001
Firstpage
145
Lastpage
146
Abstract
In this paper, we estimate the off-leakage current and drive current of single-gate (SG) ground-plane (GP), partial ground-plane (PGP), symmetric DG and asymmetric DG SOI devices by simulations using the hydrodynamic-transport model with the BBT effect.
Keywords
MOSFET; elemental semiconductors; leakage currents; semiconductor device models; silicon; silicon-on-insulator; 100 nm; BBT effect; SOI MOSFETs; Si-SiO/sub 2/; asymmetric DG SOI devices; device selection; drive current; ground-plane; hydrodynamic-transport model; off-leakage current estimation; partial ground-plane; simulations; single-gate; symmetric DG SOI devices; Capacitance; Hydrodynamics; MOSFET circuits; Merging; Nanoscale devices; Silicon; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2001 IEEE International
Conference_Location
Durango, CO, USA
ISSN
1078-621X
Print_ISBN
0-7803-6739-1
Type
conf
DOI
10.1109/SOIC.2001.958028
Filename
958028
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