Title :
Reconsideration of off-leakage current estimation of sub-100-nm SOI MOSFETs and device selection for applications
Author :
Ynagi, S.-I. ; Omura, Y.
Author_Institution :
Fac. of Eng., Kansai Univ., Osaka, Japan
Abstract :
In this paper, we estimate the off-leakage current and drive current of single-gate (SG) ground-plane (GP), partial ground-plane (PGP), symmetric DG and asymmetric DG SOI devices by simulations using the hydrodynamic-transport model with the BBT effect.
Keywords :
MOSFET; elemental semiconductors; leakage currents; semiconductor device models; silicon; silicon-on-insulator; 100 nm; BBT effect; SOI MOSFETs; Si-SiO/sub 2/; asymmetric DG SOI devices; device selection; drive current; ground-plane; hydrodynamic-transport model; off-leakage current estimation; partial ground-plane; simulations; single-gate; symmetric DG SOI devices; Capacitance; Hydrodynamics; MOSFET circuits; Merging; Nanoscale devices; Silicon; Threshold voltage;
Conference_Titel :
SOI Conference, 2001 IEEE International
Conference_Location :
Durango, CO, USA
Print_ISBN :
0-7803-6739-1
DOI :
10.1109/SOIC.2001.958028
