Title :
GaN Nanowires synthesized by electroless etching method
Author :
Najar, A. ; Slimane, A.B. ; Anjum, D.H. ; Ng, T.K. ; Ooi, B.S.
Author_Institution :
Photonics Lab., King Abdullah Univ. of Sci. & Technol. (KAUST), Thuwal, Saudi Arabia
Abstract :
Ultra-long Gallium Nitride Nanowires is synthesized via metal-electroless etching method. The morphologies and optical properties of GaN NWs show a single crystal GaN with hexagonal Wurtzite structure and high luminescence properties.
Keywords :
III-V semiconductors; crystal structure; etching; gallium compounds; luminescence; nanofabrication; wide band gap semiconductors; GaN; gallium nitride nanowire synthesis; hexagonal Wurtzite structure; luminescence properties; metal electroless etching method; nanowire morphology; nanowire optical properties; single crystal GaN; ultralong gallium nitride nanowires; Etching; Gallium nitride; Nanowires; Periodic structures; Photonics; Scanning electron microscopy; Surface morphology;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
