Title :
Enhanced subthreshold leakage current due to impact ionization in deep sub-100nm N-channel double-gate MOSFETs
Author :
Jae-Kwan Park ; Deshpande, H.V. ; Woo, J.C.S.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Abstract :
We reported the effect of impact ionization on the subthreshold leakage current in N-channel double-gate MOSFETs. In this paper, detailed analysis for the enhanced subthreshold leakage current due to impact ionization and its physical mechanism are discussed. Furthermore, the effect of the leakage current on the device scaling toward deep sub-100nm is also discussed.
Keywords :
MOSFET; impact ionisation; leakage currents; semiconductor device models; 100 nm; deep sub-100nm N-channel double-gate MOSFETs; device scaling; enhanced subthreshold leakage current; impact ionization; leakage current; Charge carrier processes; Doping; Electrons; Impact ionization; MOSFETs; Silicon; Steady-state; Subthreshold current; Threshold voltage; Transient analysis;
Conference_Titel :
SOI Conference, 2001 IEEE International
Conference_Location :
Durango, CO, USA
Print_ISBN :
0-7803-6739-1
DOI :
10.1109/SOIC.2001.958029
