• DocumentCode
    1670084
  • Title

    Enhanced subthreshold leakage current due to impact ionization in deep sub-100nm N-channel double-gate MOSFETs

  • Author

    Jae-Kwan Park ; Deshpande, H.V. ; Woo, J.C.S.

  • Author_Institution
    Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
  • fYear
    2001
  • Firstpage
    147
  • Lastpage
    148
  • Abstract
    We reported the effect of impact ionization on the subthreshold leakage current in N-channel double-gate MOSFETs. In this paper, detailed analysis for the enhanced subthreshold leakage current due to impact ionization and its physical mechanism are discussed. Furthermore, the effect of the leakage current on the device scaling toward deep sub-100nm is also discussed.
  • Keywords
    MOSFET; impact ionisation; leakage currents; semiconductor device models; 100 nm; deep sub-100nm N-channel double-gate MOSFETs; device scaling; enhanced subthreshold leakage current; impact ionization; leakage current; Charge carrier processes; Doping; Electrons; Impact ionization; MOSFETs; Silicon; Steady-state; Subthreshold current; Threshold voltage; Transient analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2001 IEEE International
  • Conference_Location
    Durango, CO, USA
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-6739-1
  • Type

    conf

  • DOI
    10.1109/SOIC.2001.958029
  • Filename
    958029
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1670084