• DocumentCode
    1670148
  • Title

    Extrinsic extraction pocedure for a small-signal GaN-HEMT model

  • Author

    Laredj, Mohamed ; Degachi, Louay ; Birafane, Ahmed ; Kouki, Ammar ; Ghannouchi, Fadhel M.

  • Author_Institution
    Electr. Eng. Dept., Ecole de Technol. Super., Montréal, QC, Canada
  • fYear
    2011
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    This paper presents an extrinsic extraction procedure for a small-signal GaN-HEMT model with a distributed gate model using Z-parameters equations. Experimental validation is performed on multifinger 4×20 and 2×100 μm HEMTs.
  • Keywords
    gallium compounds; high electron mobility transistors; wide band gap semiconductors; GaN; Z-parameters equations; distributed gate model; extrinsic extraction pocedure; multifinger HEMT; small-signal GaN-HEMT model; Gallium nitride; HEMTs; Integrated circuit modeling; MODFETs; Mathematical model; Scattering parameters; GaN HEMT modeling; parameter extraction; parasitic effects; small-signal model;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics (ICM), 2011 International Conference on
  • Conference_Location
    Hammamet
  • Print_ISBN
    978-1-4577-2207-3
  • Type

    conf

  • DOI
    10.1109/ICM.2011.6177379
  • Filename
    6177379
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1670148