Title :
Extrinsic extraction pocedure for a small-signal GaN-HEMT model
Author :
Laredj, Mohamed ; Degachi, Louay ; Birafane, Ahmed ; Kouki, Ammar ; Ghannouchi, Fadhel M.
Author_Institution :
Electr. Eng. Dept., Ecole de Technol. Super., Montréal, QC, Canada
Abstract :
This paper presents an extrinsic extraction procedure for a small-signal GaN-HEMT model with a distributed gate model using Z-parameters equations. Experimental validation is performed on multifinger 4×20 and 2×100 μm HEMTs.
Keywords :
gallium compounds; high electron mobility transistors; wide band gap semiconductors; GaN; Z-parameters equations; distributed gate model; extrinsic extraction pocedure; multifinger HEMT; small-signal GaN-HEMT model; Gallium nitride; HEMTs; Integrated circuit modeling; MODFETs; Mathematical model; Scattering parameters; GaN HEMT modeling; parameter extraction; parasitic effects; small-signal model;
Conference_Titel :
Microelectronics (ICM), 2011 International Conference on
Conference_Location :
Hammamet
Print_ISBN :
978-1-4577-2207-3
DOI :
10.1109/ICM.2011.6177379
