Electronic structure, electron field emission and magnetic behaviors of Carbon nanotube fabricated on La0.66Sr0.33MnO3 (LSMO) base layer

Author

Ray, S.C. ; Wu, S.L. ; Tsai, M.-H. ; Okpalugo, T.I.T. ; Ling, D.C. ; Pong, W.F.

Author_Institution

Sch. of Phys., Univ. of the Witwatersrand, Johannesburg, South Africa

fYear

2010

Firstpage

1076

Lastpage

1077

Abstract

This work elucidates the electronic structure, electron field emission and magnetic behaviors of carbon nanotube (CNT) fabricated without catalyst by the dip deposition method on the La_0.66Sr_0.33MnO₃ (LSMO) as base layer. X-ray absorption near edge spectroscopy (XANES), valence band spectroscopy (VBPES) and Raman spectroscopy were used for the study of electronic properties; whereas the magnetization (M) was measured versus applied magnetic field strength (H), using a commercial physics properties measurement system (PPMS) at a temperatures range between 5 K and 305 K. In addition the electron field emission characteristics were performed using the instrument Keithley Model 237 with a power supply.

Keywords

Raman spectra; XANES; carbon nanotubes; electron field emission; lanthanum compounds; magnetisation; nanofabrication; strontium compounds; valence bands; C; LSMO base layer; La_0.66Sr_0.33MnO₃; Raman spectroscopy; X-ray absorption near edge spectroscopy; XANES; applied magnetic field strength; carbon nanotube; commercial physics property measurement system; dip deposition method; electron field emission; electronic structure; instrument Keithley Model 237; magnetization; temperature 5 K to 305 K; valence band spectroscopy; Carbon nanotubes; Electromagnetic wave absorption; Electron emission; Magnetic field measurement; Magnetic properties; Magnetization; Power measurement; Raman scattering; Spectroscopy; Strontium;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2010 3rd International

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-3543-2

Electronic_ISBN

978-1-4244-3544-9

Type

conf

DOI

10.1109/INEC.2010.5425022

Filename

5425022