Title :
A SiGe BiCMOS 1ns fast hopping frequency synthesizer for UWB radio
Author :
Leenaerts, D. ; van de Beek, R. ; van der Weide, G. ; Bergervoet, J. ; Harish, K.S. ; Waite, H. ; Zhang, Y. ; Razzell, C. ; Roovers, R.
Author_Institution :
Philips Res., Eindhoven, Netherlands
Abstract :
A fully integrated multi-tone generator based on 2 PLL and a SSB mixer in 0.25μm SiGe BiCMOS achieves frequency hopping between 3.432, 3.960, and 4.488GHz within 1 ns. Spurious tones are below -50dBc in the 5GHz and -45dBc in the 2.4GHz ISM bands. The power dissipation is 73mW from a 2.7V supply. The close-in phase noise is below -90dBc/Hz and out-of-band phase noise is below -100dBc/Hz at 1MHz offset.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; frequency synthesizers; microwave mixers; phase locked loops; phase noise; ultra wideband communication; 0.25 micron; 2.4 GHz; 2.7 V; 3.432 GHz; 3.960 GHz; 4.488 GHz; 73 mW; Ge-Si; ISM bands; PLL; SSB mixer; SiGe BiCMOS; UWB radio; fast hopping frequency synthesizer; integrated multi-tone generator; phase noise; Amplitude modulation; BiCMOS integrated circuits; Frequency synthesizers; Germanium silicon alloys; Inductors; Oscillators; Phase locked loops; Signal generators; Silicon germanium; Switches;
Conference_Titel :
Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. 2005 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-8904-2
DOI :
10.1109/ISSCC.2005.1493939
