Title :
Unibond(R) SOI wafers for ultra-thin films applications
Author :
Maleville, C. ; Neyret, E. ; Ecarnot, L. ; Arene, E. ; Barge, T. ; Auberton, A.J.
Author_Institution :
S0ITEC S.A, Bernin, France
Abstract :
The benefits of Silicon-on-Insulator (SOI) as a substrate material for applications such as high end logic, microprocessors, and low power low voltage devices for portable applications became apparent at the 0.18 /spl mu/m IC generation. Higher speed. lower power and higher packing density for an overall lower manufacturing cost outweigh a higher SOI material cost. New SOI-based IC generations require low silicon thicknesses with very good uniformities. This paper deals with a thickness monitoring strategy in SOI volume production as well as Smart-Cut(R) process developments dedicated to those thin film products.
Keywords :
integrated circuit manufacture; silicon-on-insulator; surface treatment; thickness measurement; thin films; wafer bonding; IC manufacture; SOI wafers; Si-SiO; feature size; thickness monitoring; ultra-thin films; volume production; Application specific integrated circuits; Costs; Logic devices; Low voltage; Manufacturing; Microprocessors; Monitoring; Power generation; Silicon on insulator technology; Substrates;
Conference_Titel :
SOI Conference, 2001 IEEE International
Conference_Location :
Durango, CO, USA
Print_ISBN :
0-7803-6739-1
DOI :
10.1109/SOIC.2001.958033
