Fabrication of an a-Se based photodetector driven by nitrogen-doped CVD diamond

The fabrication of a diode-structured photodetector with tellurium (Te) doped amorphous selenium (a-Se) film as a photoconducting target, and nitrogen (N) doped diamond as a cold cathode was presented in this paper. The emission current of the device under different illuminance were measured. It was confirmed in this study that under the diode-structure mechanism, the difference between surface voltage V_S and anode voltage V_A would inevitably occur and a photodetector should have triode-structure which can control the extraction voltage and the surface potential individually.