• DocumentCode
    1670585
  • Title

    ZnO nanowires prepared by thermal oxidation of metallic zinc films

  • Author

    Lin, Ching-Fu ; Chao, Liang-Chiun

  • Author_Institution
    Dept. of Electron. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei, Taiwan
  • fYear
    2010
  • Firstpage
    1074
  • Lastpage
    1075
  • Abstract
    ZnO nanowires have been synthesized by thermal oxidation of metallic Zn films. The formation of ZnO nanoneedles was found to be dependent on Zn film thickness and oxidation temperature. Oxidation of 150 nm thick Zn film at 390°C yields the highest density of ZnO nanoneedles. A turn-on field of 5.5 V/¿m and a field enhancement factor of 1587 were achieved. The optimum growth condition is likely due to a balance between stress-induced formation of Zn nanoparticle and oxidation rate that favor the formation of ZnO nanoneedles.
  • Keywords
    II-VI semiconductors; metallic thin films; nanowires; needles; oxidation; zinc compounds; ZnO; field enhancement factor; film thickness; metallic zinc films; nanoneedles; nanowires; optimum growth condition; oxidation temperature; size 150 nm; stress-induced formation; temperature 390 C; thermal oxidation; Annealing; Ion beams; Nanowires; Optical films; Oxidation; Sputtering; Substrates; Surface morphology; Temperature; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2010 3rd International
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-3543-2
  • Electronic_ISBN
    978-1-4244-3544-9
  • Type

    conf

  • DOI
    10.1109/INEC.2010.5425032
  • Filename
    5425032