DocumentCode
1670585
Title
ZnO nanowires prepared by thermal oxidation of metallic zinc films
Author
Lin, Ching-Fu ; Chao, Liang-Chiun
Author_Institution
Dept. of Electron. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei, Taiwan
fYear
2010
Firstpage
1074
Lastpage
1075
Abstract
ZnO nanowires have been synthesized by thermal oxidation of metallic Zn films. The formation of ZnO nanoneedles was found to be dependent on Zn film thickness and oxidation temperature. Oxidation of 150 nm thick Zn film at 390°C yields the highest density of ZnO nanoneedles. A turn-on field of 5.5 V/¿m and a field enhancement factor of 1587 were achieved. The optimum growth condition is likely due to a balance between stress-induced formation of Zn nanoparticle and oxidation rate that favor the formation of ZnO nanoneedles.
Keywords
II-VI semiconductors; metallic thin films; nanowires; needles; oxidation; zinc compounds; ZnO; field enhancement factor; film thickness; metallic zinc films; nanoneedles; nanowires; optimum growth condition; oxidation temperature; size 150 nm; stress-induced formation; temperature 390 C; thermal oxidation; Annealing; Ion beams; Nanowires; Optical films; Oxidation; Sputtering; Substrates; Surface morphology; Temperature; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-3543-2
Electronic_ISBN
978-1-4244-3544-9
Type
conf
DOI
10.1109/INEC.2010.5425032
Filename
5425032
Link To Document