Title :
ZnO nanowires prepared by thermal oxidation of metallic zinc films
Author :
Lin, Ching-Fu ; Chao, Liang-Chiun
Author_Institution :
Dept. of Electron. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei, Taiwan
Abstract :
ZnO nanowires have been synthesized by thermal oxidation of metallic Zn films. The formation of ZnO nanoneedles was found to be dependent on Zn film thickness and oxidation temperature. Oxidation of 150 nm thick Zn film at 390°C yields the highest density of ZnO nanoneedles. A turn-on field of 5.5 V/¿m and a field enhancement factor of 1587 were achieved. The optimum growth condition is likely due to a balance between stress-induced formation of Zn nanoparticle and oxidation rate that favor the formation of ZnO nanoneedles.
Keywords :
II-VI semiconductors; metallic thin films; nanowires; needles; oxidation; zinc compounds; ZnO; field enhancement factor; film thickness; metallic zinc films; nanoneedles; nanowires; optimum growth condition; oxidation temperature; size 150 nm; stress-induced formation; temperature 390 C; thermal oxidation; Annealing; Ion beams; Nanowires; Optical films; Oxidation; Sputtering; Substrates; Surface morphology; Temperature; Zinc oxide;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5425032
