DocumentCode
1670613
Title
Gas ionization sensors with CNT/Ni field cathodes
Author
Huang, Bohr-Ran ; Lin, Tzu-Ching ; Yang, Ying-Kan
Author_Institution
Dept. of Electron. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei, Taiwan
fYear
2010
Firstpage
535
Lastpage
536
Abstract
A simple and low cost method to fabricate gas ionization sensors with CNT/Ni field cathodes on corning glasses using composite plating technique was first developed. The field emission characteristics of the initial CNT/Ni field cathode showed a low turn-on electric field Eon of about 1.2 V/¿m with an emission current density of 1 ¿A/cm2.It was found that the breakdown voltage (Vb) of the H2 gas was decreased as the pressure increased from 0.5 to 100 Torr. However; on the contrary, the Vb of the O2 gas was increased as the pressure increased. It was observed from the Raman spectra that ID/IG increased for both of the H2 and O2 gases. The full width half maximum (FWHM) around 1580 cm-1 was also increased for both of the H2 and O2 gases. Moreover, a shoulder of 1620 cm-1 appeared after the H2 and O2 gases sensing measurements. This phenomenon, indicating the degradation of the graphitization, was more obvious for the O2 gas sensing. The fabrication of the ionization sensors with CNT/Ni field cathode was relatively simple and inexpensive and could be mass-produced.
Keywords
Raman spectra; carbon nanotubes; cathodes; chemical variables measurement; electron field emission; field ionisation; gas sensors; glass; graphitisation; hydrogen; nickel; oxygen; C-Ni; CNT/Ni field cathodes; H2; O2; Raman spectra; breakdown voltage; composite plating; corning glasses; emission current density; field emission; full width half maximum; gas ionization sensors; gases sensing measurements; graphitization; hydrogen gas; oxygen gas; Cathodes; Costs; Current density; Degradation; Fabrication; Gas detectors; Gases; Glass; Ionization; Sensor phenomena and characterization;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-3543-2
Electronic_ISBN
978-1-4244-3544-9
Type
conf
DOI
10.1109/INEC.2010.5425033
Filename
5425033
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