• DocumentCode
    1670613
  • Title

    Gas ionization sensors with CNT/Ni field cathodes

  • Author

    Huang, Bohr-Ran ; Lin, Tzu-Ching ; Yang, Ying-Kan

  • Author_Institution
    Dept. of Electron. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei, Taiwan
  • fYear
    2010
  • Firstpage
    535
  • Lastpage
    536
  • Abstract
    A simple and low cost method to fabricate gas ionization sensors with CNT/Ni field cathodes on corning glasses using composite plating technique was first developed. The field emission characteristics of the initial CNT/Ni field cathode showed a low turn-on electric field Eon of about 1.2 V/¿m with an emission current density of 1 ¿A/cm2.It was found that the breakdown voltage (Vb) of the H2 gas was decreased as the pressure increased from 0.5 to 100 Torr. However; on the contrary, the Vb of the O2 gas was increased as the pressure increased. It was observed from the Raman spectra that ID/IG increased for both of the H2 and O2 gases. The full width half maximum (FWHM) around 1580 cm-1 was also increased for both of the H2 and O2 gases. Moreover, a shoulder of 1620 cm-1 appeared after the H2 and O2 gases sensing measurements. This phenomenon, indicating the degradation of the graphitization, was more obvious for the O2 gas sensing. The fabrication of the ionization sensors with CNT/Ni field cathode was relatively simple and inexpensive and could be mass-produced.
  • Keywords
    Raman spectra; carbon nanotubes; cathodes; chemical variables measurement; electron field emission; field ionisation; gas sensors; glass; graphitisation; hydrogen; nickel; oxygen; C-Ni; CNT/Ni field cathodes; H2; O2; Raman spectra; breakdown voltage; composite plating; corning glasses; emission current density; field emission; full width half maximum; gas ionization sensors; gases sensing measurements; graphitization; hydrogen gas; oxygen gas; Cathodes; Costs; Current density; Degradation; Fabrication; Gas detectors; Gases; Glass; Ionization; Sensor phenomena and characterization;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2010 3rd International
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-3543-2
  • Electronic_ISBN
    978-1-4244-3544-9
  • Type

    conf

  • DOI
    10.1109/INEC.2010.5425033
  • Filename
    5425033