DocumentCode :
1670678
Title :
Memristor: Modeling read and write operations
Author :
Homouz, Dirar ; Mohammad, Baker ; Elgabra, Hazem ; Farahat, Ilyas
Author_Institution :
Khalifa Univ. of Sci., Technol. & Res., Abu Dhabi, United Arab Emirates
fYear :
2011
Firstpage :
1
Lastpage :
5
Abstract :
The realization of the missing forth element by HP in 2008, the memristor, which was theorized by Leon Chau in 1971, adds new promising technology that enables the continuing improvement of performance, power and cost of integrated circuits and keeping Moore´s law alive. Memristor-based technology provides much better scalability, higher utilization when used as memory, and overall lower power consumption. The goal of this paper is to study the read and write behavior of memristors using mathematical and SPICE simulations. This modeling will help us understand the behavior and the stability of the memristor state especially under the repeated read process. We show in this study that reading a memristor by a decaying voltage can balance the tradeoff between stable reading and fast writing.
Keywords :
SPICE; memristors; random-access storage; Moore law; SPICE simulation; integrated circuits; mathematical simulation; memristor state behavior; memristor state stability; memristor-based technology; read-write operation modeling; Equations; Integrated circuit modeling; Mathematical model; Memristors; Resistance; Stability analysis; Switches; Memristor; Nonvolatile memory; Resistive RAM; nano-device modeling; nanotechnology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics (ICM), 2011 International Conference on
Conference_Location :
Hammamet
Print_ISBN :
978-1-4577-2207-3
Type :
conf
DOI :
10.1109/ICM.2011.6177398
Filename :
6177398
Link To Document :
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