• DocumentCode
    1670867
  • Title

    The synthesis of carbon nanotubes on silicon nanowires by thermal chemical vapor deposition

  • Author

    Lee, Shih-Fong ; Liao, Shu-hui ; Chang, Yung-Ping ; Lee, Li-Ying ; Li, Shi-Kai

  • Author_Institution
    Dept. of Electr. Eng., Dayeh Univ., Changhua, Taiwan
  • fYear
    2010
  • Firstpage
    1050
  • Lastpage
    1051
  • Abstract
    In this work, carbon nanotubes (CNTs) were grown on the silicon nanowires substrate with different thickness of Ni catalyst layer at temperatures 900°C using thermal chemical vapor deposition (CVD) to study their effects on surface morphology and field emission characteristics. Scanning electron microscopy (SEM) image was used to observe the surface morphology and structural properties, and Raman spectroscopy was employed to investigate the structural changes caused by different catalyst thickness. Our experimental results clearly demonstrate that catalyst thickness can effectively vary the field emission current of CNTs. Obvious changes in the surface density and morphology of CNTs caused by the variation of catalyst thickness can be clearly seen, which attributed to the grain size effect and thus an increase in emission current. The emission characteristics of CNTs were found to be dependent on the diameter of carbon nanotubes. Compared with CNTs grown on the different thickness of catalyst, CNTs grown on silicon nano wires with Ni catalyst of 7.5 nm exhibit the largest field emission current.
  • Keywords
    Raman spectra; carbon nanotubes; catalysts; chemical vapour deposition; field emission; grain size; nanowires; nickel; scanning electron microscopy; silicon; surface morphology; C; Ni; Raman spectroscopy; SEM; Si; carbon nanotubes; catalyst layer; catalyst thickness; field emission current; grain size effect; scanning electron microscopy; silicon nanowires; size 7.5 nm; structural changes; surface density; surface morphology; temperature 900 degC; thermal chemical vapor deposition; Carbon nanotubes; Chemical vapor deposition; Grain size; Nanowires; Raman scattering; Scanning electron microscopy; Silicon; Spectroscopy; Surface morphology; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2010 3rd International
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-3543-2
  • Electronic_ISBN
    978-1-4244-3544-9
  • Type

    conf

  • DOI
    10.1109/INEC.2010.5425041
  • Filename
    5425041