Title :
Synthesis of crystalline β-FeSi2 under high-temperature and high-pressure
Author :
Su, W.N. ; Wu, X.L. ; Wang, X. ; Zhang, Y.Y. ; Shen, J.C. ; Zhu, J.M.
Author_Institution :
Dept. of Phys., Nanjing Univ., Nanjing, China
Abstract :
Semiconducting ß-FeSi2 material has many potential applications in advanced electronic and optoelectronic devices. In this work, we report for the first time the synthesis of crystalline ß-FeSi2 via high-temperature and high-pressure reaction of Si and Fe powders. The XRD and Raman scattering results confirm the formation of ß-FeSi2. The HRTEM images show the existence of two kinds of lattice fringes and the corresponding SAED analysis indicates that ß-FeSi2 phase exists together with Si component. There are dislocations on the interfaces of ß-FeSi2/Si.
Keywords :
Raman spectra; X-ray diffraction; dislocations; electron diffraction; iron alloys; powders; semiconductor materials; silicon; silicon alloys; transmission electron microscopy; FeSi2; FeSi2-Si; HRTEM images; Raman scattering; SAED analysis; XRD; dislocations; high-pressure reaction; high-temperature reaction; interfaces; lattice fringes; powders; semiconducting material; Crystalline materials; Crystallization; Iron; Lattices; Optoelectronic devices; Powders; Raman scattering; Semiconductivity; Semiconductor materials; X-ray scattering;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5425042
