Title :
A 950 MHz rectifier circuit for sensor networks with 10 m-distance
Author :
Umeda, Toshiyuki ; Yoshida, Hiroshi ; Sekine, Shuichi ; Fujita, Yumi ; Suzuki, Takuji ; Otaka, Shoji
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
A high-sensitivity rectifier is fabricated in a 0.3 μm CMOS technology. The circuit can rectify an RF signal less than the NMOS threshold voltage by using a bias voltage between the gate and the drain terminals of a transistor. The IC achieves a 950 MHz signal rectification over -14 dBm corresponding to 10 m-distance communication and recharges a 1.2 V secondary battery.
Keywords :
CMOS integrated circuits; UHF detectors; UHF integrated circuits; battery chargers; rectification; rectifying circuits; wireless sensor networks; 0.3 micron; 1.2 V; 10 m; 950 MHz; CMOS technology; NMOS threshold voltage; RF signal; gate-drain bias voltage; high-sensitivity rectifier; rectifier circuit; secondary battery recharge; sensor distance; sensor networks; signal rectification; Base stations; Batteries; Capacitors; Circuits; Costs; Equations; MOSFETs; Rectifiers; Threshold voltage; Ubiquitous computing;
Conference_Titel :
Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. 2005 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-8904-2
DOI :
10.1109/ISSCC.2005.1493966
