Title :
Nano-wires for room temperature operated hybrid CMOS-NANO integrated circuits
Author :
Ecoffey, Serg ; Pott, Vincent ; Bouvet, Didier ; Mazza, Marco ; Mahapatra, Santanu ; Schmid, Alexandre ; Leblebici, Yusuf ; Declercq, Michel J. ; Ionescu, Adrian M.
Author_Institution :
Swiss Fed. Inst. of Technol., Lausanne, Switzerland
Abstract :
N-doped polysilicon gated-nanowires (poly-SiNW) are reported. The V-shape and hysteresis of their I-V characteristics are used to build analog and memory circuit cells. Integration of the poly-SiNW in CMOS is demonstrated. A precise current-measurement application with 1pA resolution and negative differential resistor is reported. A nanoscale capacitor-less hysteresis memory cell using constant-current biased poly-SiNW is designed and experimentally validated.
Keywords :
CMOS analogue integrated circuits; CMOS memory circuits; electric current measurement; nanowires; CMOS; I-V characteristics; N-doped polysilicon gated-nanowires; V-shape; analog circuit; constant-current biased poly-SiNW; current measurement; hybrid CMOS-NANO integrated circuits; memory circuit cells; nanoscale capacitor-less hysteresis memory cell; negative differential resistor; room temperature operation; CMOS integrated circuits; CMOS memory circuits; CMOS technology; Current measurement; Energy consumption; Hybrid integrated circuits; Hysteresis; Input variables; Temperature; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. 2005 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-8904-2
DOI :
10.1109/ISSCC.2005.1493968
