A flexible 8b asynchronous microprocessor based on low-temperature poly-silicon TFT technology

Author

Karaki, Nobuo ; Nanmoto, Takashi ; Ebihara, Hiroaki ; Utsunomiya, Sumio ; Inoue, Satoshi ; Shimoda, Tatsuya

Author_Institution

Seiko Epson Corp., Nagano, Japan

fYear

2005

Firstpage

272

Abstract

A flexible 8b asynchronous microprocessor ACTII based on low-temperature poly-silicon TFT technology, surface-free technology by laser annealing and ablation (SUFTLA®), and asynchronous circuit design language, verilog+, is presented. The 32k-transistor microprocessor draws 180 μA from a 5 V supply. The power level is 30% of the synchronous counterpart.

Keywords

asynchronous circuits; elemental semiconductors; hardware description languages; integrated circuit design; laser ablation; laser beam annealing; logic CAD; low-power electronics; microprocessor chips; silicon; thin film transistors; 180 muA; 5 V; 8 bit; ACTII flexible asynchronous microprocessor; SUFTLA; Si; laser ablation; laser annealing; low-temperature poly-silicon TFT technology; microprocessor power level; surface-free technology; verilog+ asynchronous circuit design language; Asynchronous circuits; Circuit simulation; Circuit synthesis; Grain size; Hardware design languages; Integrated circuit technology; Microprocessors; SPICE; Synthesizers; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. 2005 IEEE International

Conference_Location

San Francisco, CA

ISSN

0193-6530

Print_ISBN

0-7803-8904-2

Type

conf

DOI

10.1109/ISSCC.2005.1493974

Filename

1493974