Title :
Simulation of grading double hetero-junction non-polar InGaN solar cell
Author :
Hsun-Wen Wang ; Pei-Chen Yu ; Hau-Vei Han ; Chien-Chung Lin ; Hao-Chung Kuo ; Shiuan-Huei Lin
Author_Institution :
Dept. of Electrophys., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
The characteristics of non-polar double heterojunction GaN/ InxGa1-xN solar cells with various indium contents are numerically investigated. By smoothing the interface band edge offset with graded junction, the maximum efficiency reached 24.32 % as In0.6Ga0.4N.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; numerical analysis; semiconductor device models; semiconductor heterojunctions; solar cells; wide band gap semiconductors; GaN-InxGa1-xN; graded junction; grading double heterojunction nonpolar InGaN solar cell simulation; indium contents; interface band edge offset; maximum efficiency; nonpolar double heterojunction solar cell characteristics; smoothing; Absorption; Gallium nitride; Heterojunctions; Indium; Mathematical model; Photovoltaic cells; Short circuit currents;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
