• DocumentCode
    1671508
  • Title

    Solid-state microwave induced plasma synthesis of antimony telluride

  • Author

    Suriwong, Tawat ; Thongtem, Titipun ; Thongtem, Somchai

  • Author_Institution
    Dept. of Phys. & Mater. Sci., Chiang Mai Univ., Chiang Mai, Thailand
  • fYear
    2010
  • Firstpage
    1016
  • Lastpage
    1017
  • Abstract
    The utility of microwave heating and microwave generating of plasma as a synthetic technique toward the synthesis of Sb2Te3 is reported. The solid-state microwave synthetic method was studied the effects of irradiation times and cycles, and molar ratio of Sb:Te at a 900 W irradiated microwave power in order to determine phase purity of the reaction products. X-ray powder diffraction, field-emission scanning and transmission electron microscopic, including Raman spectroscopic techniques were used to investigate their phase, structures, surface morphologies and vibration characteristics. Their optical properties were also investigated by UV-vis and luminescent spectrophotometries.
  • Keywords
    Raman spectra; X-ray diffraction; antimony compounds; crystal structure; field emission electron microscopy; luminescence; materials preparation; microwave heating; plasma materials processing; surface morphology; transmission electron microscopy; ultraviolet spectra; vibrations; visible spectra; Raman spectroscopy; Sb2Te3; UV-vis spectrophotometry; X-ray powder diffraction; field-emission scanning microscopy; irradiation cycles; irradiation times; luminescent spectrophotometry; microwave heating; optical properties; phase purity; reaction products; solid-state microwave induced plasma synthesis; surface morphology; transmission electron microscopy; vibration; Electromagnetic heating; Microwave generation; Microwave theory and techniques; Optical diffraction; Plasmas; Powders; Solid state circuits; Spectroscopy; Tellurium; X-ray diffraction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2010 3rd International
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-3543-2
  • Electronic_ISBN
    978-1-4244-3544-9
  • Type

    conf

  • DOI
    10.1109/INEC.2010.5425067
  • Filename
    5425067