Title :
A single-chip Si-LDMOS power amplifier for GSM
Author :
Shimizu, Toshihiko ; Matsunaga, Yoshikuni ; Sakurai, Satoshi ; Yoshida, Isao ; Hotta, Masao
Author_Institution :
Renesas Technol., Gunma, Japan
Abstract :
A 0.23 μm single-chip Si-LDMOS high-power amplifier with matching circuits and all control blocks for quad-band GSM handset phones is implemented in 2.1×2.45 mm2. The IC achieves a maximum PAE of 54% at 36 dBm output power and input VSWR of less than 1.6 over the GSM850/900 bands.
Keywords :
MOS analogue integrated circuits; UHF power amplifiers; cellular radio; power MOSFET; power integrated circuits; 0.23 micron; 2.1 mm; 2.45 mm; 850 to 900 MHz; amplifier matching circuits; cellular phones; high-power amplifier; quad-band GSM handset phones; single-chip LDMOS power amplifier; Circuits; Costs; GSM; Interference; MOSFETs; Manufacturing processes; Power amplifiers; Radio frequency; Silicon; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. 2005 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-8904-2
DOI :
10.1109/ISSCC.2005.1493993
