Title :
A 1.75GHz GSM/EDGE polar modulated CMOS RF power amplifier
Author :
Reynaert, Patrick ; Steyaert, Michiel
Author_Institution :
Katholieke Univ., Leuven, Belgium
Abstract :
A 0.18 μm linearized CMOS power amplifier, based on polar modulation, is implemented in 1.8×3.6 mm2. The switching RF PA achieves an output power of 27 dBm with a PAE of 34% and an input power of -3 dBm. As an EDGE transmitter, the amplifier achieves an average output power of 23.8 dBm, a PAE of 22%, an EVM-rms of 1.67%, and an ACPR of -56.7 dBc.
Keywords :
CMOS integrated circuits; UHF power amplifiers; cellular radio; linearisation techniques; 0.18 micron; 1.75 GHz; 1.8 mm; 22 percent; 3.6 mm; 34 percent; EDGE transmitter; GSM/EDGE power amplifier; class E amplifier linearization; linearized CMOS power amplifier; polar modulated amplifier; polar modulation; switching RF PA; Capacitance; Distortion measurement; GSM; Inductors; Nonlinear distortion; Phase modulation; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. 2005 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-8904-2
DOI :
10.1109/ISSCC.2005.1493994
