• DocumentCode
    1671571
  • Title

    A 1.75GHz GSM/EDGE polar modulated CMOS RF power amplifier

  • Author

    Reynaert, Patrick ; Steyaert, Michiel

  • Author_Institution
    Katholieke Univ., Leuven, Belgium
  • fYear
    2005
  • Firstpage
    312
  • Abstract
    A 0.18 μm linearized CMOS power amplifier, based on polar modulation, is implemented in 1.8×3.6 mm2. The switching RF PA achieves an output power of 27 dBm with a PAE of 34% and an input power of -3 dBm. As an EDGE transmitter, the amplifier achieves an average output power of 23.8 dBm, a PAE of 22%, an EVM-rms of 1.67%, and an ACPR of -56.7 dBc.
  • Keywords
    CMOS integrated circuits; UHF power amplifiers; cellular radio; linearisation techniques; 0.18 micron; 1.75 GHz; 1.8 mm; 22 percent; 3.6 mm; 34 percent; EDGE transmitter; GSM/EDGE power amplifier; class E amplifier linearization; linearized CMOS power amplifier; polar modulated amplifier; polar modulation; switching RF PA; Capacitance; Distortion measurement; GSM; Inductors; Nonlinear distortion; Phase modulation; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. 2005 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0193-6530
  • Print_ISBN
    0-7803-8904-2
  • Type

    conf

  • DOI
    10.1109/ISSCC.2005.1493994
  • Filename
    1493994
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1671571