2D numerical modeling of SiGe structures

Author

Amon, Slavko ; Ferk, Brane ; Vrtacnik, Danilo ; Resnik, Drago ; Krizaj, Dejan ; Sokolic, Sasa

Author_Institution

Fac. of Electr. Eng., Ljubljana Univ., Slovenia

Volume

1

fYear

1998

Firstpage

326

Abstract

2D modeling of SiGe devices and circuits is reviewed. SiGe HBT and SiGe ECL circuits are studied as an example. Numerical simulation is performed with Heterojunction Device and Circuit Analysis Advanced Application Modules in general purpose 2D device simulator MEDICI. Calculated results demonstrate that MEDICI can be used for advanced simulation tasks, which cannot be performed by more specialized simulators. Development and application of improved, more accurate temperature dependent models for SiGe base transport properties will result in accurate simulation and optimization of SiGe devices and circuits

Keywords

Ge-Si alloys; bipolar logic circuits; circuit simulation; digital simulation; emitter-coupled logic; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; 2D numerical modeling; ECL circuits; HBT; MEDICI; SiGe; base transport properties; general purpose 2D device simulator; temperature dependent models; Analytical models; Circuit analysis; Circuit simulation; Germanium silicon alloys; Heterojunction bipolar transistors; Medical simulation; Numerical models; Numerical simulation; Silicon germanium; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrotechnical Conference, 1998. MELECON 98., 9th Mediterranean

Conference_Location

Tel-Aviv

Print_ISBN

0-7803-3879-0

Type

conf

DOI

10.1109/MELCON.1998.692410

Filename

692410