Title :
2D numerical modeling of SiGe structures
Author :
Amon, Slavko ; Ferk, Brane ; Vrtacnik, Danilo ; Resnik, Drago ; Krizaj, Dejan ; Sokolic, Sasa
Author_Institution :
Fac. of Electr. Eng., Ljubljana Univ., Slovenia
Abstract :
2D modeling of SiGe devices and circuits is reviewed. SiGe HBT and SiGe ECL circuits are studied as an example. Numerical simulation is performed with Heterojunction Device and Circuit Analysis Advanced Application Modules in general purpose 2D device simulator MEDICI. Calculated results demonstrate that MEDICI can be used for advanced simulation tasks, which cannot be performed by more specialized simulators. Development and application of improved, more accurate temperature dependent models for SiGe base transport properties will result in accurate simulation and optimization of SiGe devices and circuits
Keywords :
Ge-Si alloys; bipolar logic circuits; circuit simulation; digital simulation; emitter-coupled logic; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; 2D numerical modeling; ECL circuits; HBT; MEDICI; SiGe; base transport properties; general purpose 2D device simulator; temperature dependent models; Analytical models; Circuit analysis; Circuit simulation; Germanium silicon alloys; Heterojunction bipolar transistors; Medical simulation; Numerical models; Numerical simulation; Silicon germanium; Temperature dependence;
Conference_Titel :
Electrotechnical Conference, 1998. MELECON 98., 9th Mediterranean
Conference_Location :
Tel-Aviv
Print_ISBN :
0-7803-3879-0
DOI :
10.1109/MELCON.1998.692410
