Title :
Research on mechanical-electrical coupling characteristics of GaAs HEMT build-in cantilevers-mass
Author :
Hou, Tingting ; Xue, Chenyang ; Liu, Guowen ; Tan, Zhenxin ; Zhang, Binzhen ; Liu, Jun ; Zhang, Wendong
Author_Institution :
Nat. Key Lab. For Electron. Meas. Technol., North Univ. of China, Taiyuan, China
Abstract :
The micro-structure of GaAs HEMT build-in cantilevers-mass was designed and fabricated. GaAs HEMTs were embeded at the root of cantilevers for increasing the sensitivity to external force. In our experiments, it has been proved that the sensitivity of GaAs HEMT is higher than that of silicon by the Mechanical-Electrical coupling characteristics. The magnitude of the external force was then calculated according to the out-put voltage of GaAs HEMT. This research would be good for developing a new sensor technology.
Keywords :
III-V semiconductors; cantilevers; gallium arsenide; high electron mobility transistors; GaAs; HEMT build-in cantilevers-mass; mechanical-electrical coupling characteristics; microstructure; sensor technology; Electrons; Frequency; Gallium arsenide; HEMTs; MODFETs; Silicon; Stress; Substrates; Temperature; Testing;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5425074
