Flexible MIM capacitors using zirconium-silicate and hafnium-silicate as gate-dielectric films

To the first time, we have fabricated metal-insulator-metal (MIM) capacitors using 10-nm-thick zirconium-silicate (ZrSi_xO_y) and hafnium-silicate (HfSi_mO_n) thin dielectric films on the flexible polyimide substrate by sol-gel process. The sol-gel films were oxidized by employing oxygen plasma to enhance the electrical performance at low temperature (~250°C). The oxygen plasma may accept as most effective process at low temperature to surface oxidation of a dielectric film for flexible organic device. The results showed the satisfactory electrical characteristics for the corresponding films with low leakage current densities ~10^-9 Acm^-2 at 5V and maximum-capacitance densities 12.10 (ZrSi_xO_y) and 14.32 fF/¿m² (HfSi_mO_n), at 1MHz. These entire make the combinatorial thin oxide films based MIM capacitors to be very suitable for future flexible devices.