DocumentCode :
1672026
Title :
Molecular beam epitaxy-grown InGaN nanomushrooms and nanowires for white light source applications
Author :
Gasim, A. ; Ng, Tien Khee ; Cha, D.K. ; Bhattacharya, Pallab ; Ooi, Boon S.
Author_Institution :
Photonics Lab., King Abdullah Univ. of Sci. & Technol. (KAUST), Thuwal, Saudi Arabia
fYear :
2012
Firstpage :
1
Lastpage :
2
Abstract :
We report the observation of coexisting InGaN nanomushrooms and nanowires grown via MBE. Photoluminescence characterization shows that the nanostructures emit yellow and blue light, respectively. The combined emission is promising for white-LEDs.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; light sources; molecular beam epitaxial growth; nanofabrication; nanowires; photoluminescence; semiconductor growth; wide band gap semiconductors; InGaN; blue light; molecular beam epitaxy-grown InGaN nanomushrooms; molecular beam epitaxy-grown InGaN nanowires; nanostructures; photoluminescence characterization; white light source applications; white-LED; yellow light; Gallium nitride; Light emitting diodes; Molecular beam epitaxial growth; Nanowires; Scanning electron microscopy; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
Type :
conf
Filename :
6326355
Link To Document :
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