DocumentCode
1672026
Title
Molecular beam epitaxy-grown InGaN nanomushrooms and nanowires for white light source applications
Author
Gasim, A. ; Ng, Tien Khee ; Cha, D.K. ; Bhattacharya, Pallab ; Ooi, Boon S.
Author_Institution
Photonics Lab., King Abdullah Univ. of Sci. & Technol. (KAUST), Thuwal, Saudi Arabia
fYear
2012
Firstpage
1
Lastpage
2
Abstract
We report the observation of coexisting InGaN nanomushrooms and nanowires grown via MBE. Photoluminescence characterization shows that the nanostructures emit yellow and blue light, respectively. The combined emission is promising for white-LEDs.
Keywords
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; light sources; molecular beam epitaxial growth; nanofabrication; nanowires; photoluminescence; semiconductor growth; wide band gap semiconductors; InGaN; blue light; molecular beam epitaxy-grown InGaN nanomushrooms; molecular beam epitaxy-grown InGaN nanowires; nanostructures; photoluminescence characterization; white light source applications; white-LED; yellow light; Gallium nitride; Light emitting diodes; Molecular beam epitaxial growth; Nanowires; Scanning electron microscopy; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-4673-1839-6
Type
conf
Filename
6326355
Link To Document