Investigation based on NEMS double Si3N4 resonant beams pressure sensor

Author

Yang, Chuan ; Guo, Can ; Yuan, Xiaowei

Author_Institution

Dept. of Mech. Eng., Xi´´an JiaoTong Univ., Xi´´an, China

fYear

2010

Firstpage

553

Lastpage

554

Abstract

A type of NEMS double Si₃N₄ resonant beams pressure sensor is presented in this paper. The maths models are established in allusion to the Si₃N₄ resonant beams and pressure sensitive diaphragm. Based on the maths model of Si₃N₄ resonant beams, the relation between the resonant frequency and key dimensions of Si₃N₄ resonant beams is analyzed. Based on the maths model of pressure sensitive diaphragm, the distribution state of stress is analyzed theoretically, through the analysis result, the position where the Si₃N₄ resonant beams are placed above the pressure sensitive diaphragm is optimized. The capability of the sensor which has been optimized is generally analyzed by ANSYS software of finite element analysis, a range of measured pressure is 0~400 Kpa, the coefficient of linearity correlation is 0.99346, and the sensitivity is 498.24 Hz/Kpa, it is higher than silicon beam sensor´s.

Keywords

beams (structures); diaphragms; finite element analysis; micromechanical resonators; nanosensors; pressure sensors; silicon compounds; ANSYS software; NEMS; Si₃N₄; double resonant beam pressure sensor; finite element analysis; linearity correlation coefficient; microresonant pressure sensor; pressure 0 kPa to 400 kPa; pressure sensitive diaphragm; stress distribution state; Frequency measurement; Magnetic resonance; Manufacturing; Micromechanical devices; Nanoelectromechanical systems; Pressure measurement; Resonant frequency; Silicon; Thermal conductivity; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2010 3rd International

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-3543-2

Electronic_ISBN

978-1-4244-3544-9

Type

conf

DOI

10.1109/INEC.2010.5425087

Filename

5425087