DocumentCode
1672146
Title
Fabrication of proton conducting Y2 O3 -doped BaZrO3 thin films by electrostatic spray deposition
Author
Somroop, K. ; Pornprasertsuk, R.
Author_Institution
Dept. of Mater. Sci., Chulalongkorn Univ., Bangkok, Thailand
fYear
2010
Firstpage
974
Lastpage
975
Abstract
Y2O3-doped BaZrO3 (BYZ) thin films were deposited by electrostatic spray deposition (ESD) technique. The effects of substrate temperature, precursor solution, flow rate, nozzle to substrate distance, voltage, and deposition time on the quality of the films have been studied. The microstructure, phase, and proton conductivities of the deposited BYZ thin films has been characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), and electrochemical impedance spectroscopy technique, respectively. The result has showed that ESD is an effective technique for thin film fabrications in both nano- and micro-scale electrochemical device.
Keywords
X-ray diffraction; barium compounds; crystal microstructure; electrochemical impedance spectroscopy; nanofabrication; scanning electron microscopy; semiconductor thin films; substrates; yttrium compounds; zirconium compounds; BaZrO3:Y2O3; X-ray diffraction; electrochemical impedance spectroscopy; electrostatic spray deposition; flow rate; microstructure; precursor solution; proton conducting thin films; proton conductivity; scanning electron microscopy; substrate temperature; Electrostatic discharge; Fabrication; Microstructure; Protons; Scanning electron microscopy; Spraying; Sputtering; Substrates; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-3543-2
Electronic_ISBN
978-1-4244-3544-9
Type
conf
DOI
10.1109/INEC.2010.5425088
Filename
5425088
Link To Document