Title :
Growth and characterization of Er doped ZnO prepared by reactive ion beam sputtering
Author :
Liau, Chung-Chi ; Chao, Liang-Chiun
Author_Institution :
Dept. of Electron. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei, Taiwan
Abstract :
Er doped ZnO (EZO) has been deposited on Si substrate at 500°C by reactive ion beam sputtering utilizing a capillaritron ion source at various oxygen partial flow rates. All the EZO films exhibit a preferred (002) growth direction. Maximum Er emission at 984 nm (4I11/2 to 4I15/2) was achieved from EZO deposited with 12.5% oxygen partial flow rate. XPS analysis of the O 1s core level shows an additional peak centered at 532.5 eV, indicating the presence of erbium oxide.
Keywords :
II-VI semiconductors; X-ray photoelectron spectra; core levels; erbium; semiconductor growth; semiconductor thin films; sputter deposition; wide band gap semiconductors; zinc compounds; Si; XPS; ZnO:Er; capillaritron ion source; core level; films; preferred (002) growth direction; reactive ion beam sputtering; temperature 500 degC; wavelength 984 nm; Erbium; Excitons; Ion beams; Ion sources; Optical attenuators; Silicon; Sputtering; Substrates; Surface morphology; Zinc oxide;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5425089
