Title :
Performances of MOS-Gated GTO in high voltage power applications
Author :
Ronsisvalle, C. ; Enea, V. ; Abbate, C. ; Busatto, G. ; Sanseverino, A.
Author_Institution :
ST Microelectron., Catania, Italy
Abstract :
In this paper we present a comparative study between the characteristics of the MOS-Gated GTO, a new power semiconductor device, and the IGBT having the same n-n+p+vertical structure. The blocking voltage of the analyzed devices ranges between 1.2 kV and 4.5 kV. Simulation results show that the MOS-GTO exhibits a much better trade-off between on state and switching characteristics than the IGBT particularly in the range of the high blocking voltages. The excellent performances of the MOS-GTO make it a very promising device for high voltage power applications.
Keywords :
MOSFET circuits; insulated gate bipolar transistors; thyristors; MOS-gated gate turn-off devices; blocking voltage; insulated gate bipolar transistors; power semiconductor device; voltage 1.2 kV to 4.5 kV; Cathodes; Conductivity; Equivalent circuits; Insulated gate bipolar transistors; Low voltage; MOSFET circuits; Power semiconductor switches; Thyristors; Uniform resource locators; Virtual prototyping; New switching devices-MOS controlled device;
Conference_Titel :
Power Electronics and Applications, 2009. EPE '09. 13th European Conference on
Conference_Location :
Barcelona
Print_ISBN :
978-1-4244-4432-8
Electronic_ISBN :
978-90-75815-13-9
