Influence of nano-embossing on properties of Pb(Zr0.3,Ti0.7)O3 ferroelectric thin film

Author

Shen, Zhenkui ; Chen, Zhihui ; Fang, Jiangrong ; Lu, Bingrui ; Qiu, Zhijun ; Jiang, Anquan ; Chen, Yifang ; Qu, Xinping ; Liu, Ran

Author_Institution

Dept. of Microelectron., Fudan Univ., Shanghai, China

fYear

2010

Firstpage

978

Lastpage

979

Abstract

In this work, we apply nano-embossing technology to fabricate Pb(Zr_0.3, Ti_0.7)O3 (PZT) ferroelectric thin film nanostructures and investigate the influence of the patterning process on the material and ferroelectric properties by using SEM, XRD and Precision Ferroelectric Tester. Embossing process has been optimized for embossing depth and pattern profile. It was found that embossing will result in (100) preferred orientation of the PZT thin film. The electrical characteristics of patterned and unpatterned PZT films have been also studied for comparison.

Keywords

X-ray diffraction; embossing; ferroelectric thin films; lead compounds; nanopatterning; scanning electron microscopy; titanium compounds; zirconium compounds; PZT ferroelectric thin film nanostructures; PZT thin film; Pb(Zr_0.3Ti_0.7)O₃; X-ray diffraction; depth profile; electrical characteristics; embossing process; ferroelectric properties; material properties; nano-embossing technology; pattern profile; patterning process; precision ferroelectric tester; scanning electron microscopy; Annealing; Embossing; Ferroelectric films; Ferroelectric materials; Nanostructures; Radio access networks; Scanning electron microscopy; Switches; Temperature; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2010 3rd International

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-3543-2

Electronic_ISBN

978-1-4244-3544-9

Type

conf

DOI

10.1109/INEC.2010.5425090

Filename

5425090