DocumentCode :
1672268
Title :
Magnetic and optical properties of Mn doped ZnO nanocrystalline films
Author :
Xia, Chuan-hui ; Hu, Chen-guo ; Tian, Yong-shu ; Wan, Buyong ; He, Xiaoshan ; Xu, Jing
Author_Institution :
Dept. of Appl. Phys., Chongqing Univ., Chongqing, China
fYear :
2010
Firstpage :
982
Lastpage :
983
Abstract :
We have investigated the properties of Mn-doped ZnO nanocrystalline films grown on zinc foil by hydrothermal method. The microstructure, optical and magnetic properties of these films have been characterized by SEM, XRD, XPS and UV-vis spectrum. The XPS spectra show the doping manganese exists as Mn2+. From UV-vis spectra, the shift in band gap and greater reflectivity can be observed due to Mn doping in ZnO. The magnetic property measurement of the Mn-doped ZnO exhibits a room temperature ferromagnetic characteristic with a saturation magnetization (Ms) of 0.3902 × 10-3 emu/cm2 and a coercive field of 47 Oe.
Keywords :
II-VI semiconductors; X-ray diffraction; X-ray photoelectron spectra; coercive force; crystal growth from solution; crystal microstructure; ferromagnetic materials; magnetisation; manganese; nanostructured materials; optical constants; scanning electron microscopy; semiconductor doping; semiconductor thin films; semimagnetic semiconductors; ultraviolet spectra; visible spectra; wide band gap semiconductors; zinc compounds; SEM; UV-vis spectrum; X-ray diffraction; X-ray photoelectron microscopy; XPS; XRD; Zn; ZnO:Mn; band gap; coercive field; hydrothermal method; magnetic properties; manganese doping; microstructure; nanocrystalline films; optical properties; room temperature ferromagnetic characteristic; saturation magnetization; scanning electron microscopy; zinc foil; Doping; Magnetic films; Magnetic properties; Manganese; Microstructure; Optical films; Optical saturation; Saturation magnetization; X-ray scattering; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
Type :
conf
DOI :
10.1109/INEC.2010.5425092
Filename :
5425092
Link To Document :
بازگشت