Efficiency and droop improvement in InGaN/GaN light-emitting diodes by selectively carrier-distribution manipulation

Author

Lin, Da-Wei ; Wang, Chao-Hsun ; Chang, Shih-Pang ; Ku, Pu-Hsih ; Lan, Yu-Pin ; Kuo, Hao-Chung ; Lu, Tien- Chang ; Wang, Shing-Chung ; Chang, Chun-Yen

Author_Institution

Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2012

Firstpage

1

Lastpage

2

Abstract

Efficiency and droop behavior in InGaN/GaN light-emitting diodes are both improved by selectively-graded-composition multi-quantum barriers (SGQB). Simulation results show that SGQB could moderately improve the hole transport in active region. In the meantime, spatial distribution overlap between electrons and holes in active region could be also well-considered. Therefore, the radiative recombination of SGQB LED is more efficient than that of conventional LED. The overall efficiency and droop behavior are simultaneously improved in SGQB LED, at both low and high current density.

Keywords

III-V semiconductors; electron-hole recombination; gallium compounds; indium compounds; light emitting diodes; quantum well devices; wide band gap semiconductors; InGaN-GaN; active region; carrier distribution manipulation; droop improvement; hole transport; light emitting diode; radiative recombination; selectively graded composition multiquantum barriers; Charge carrier processes; Current density; Gallium nitride; Light emitting diodes; Power generation; Radiative recombination;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics (CLEO), 2012 Conference on

Conference_Location

San Jose, CA

Print_ISBN

978-1-4673-1839-6

Type

conf

Filename

6326367