Title :
Optimization of boron pocket implantation for deep sub-micron NMOSFET process
Author :
Jiang, Chun ; Nowak, Ed ; Ding, Lily ; Loh, Y.T.
Author_Institution :
VLSI Technol. Inc., San Jose, CA, USA
Abstract :
The impact of boron pocket implant in NMOSFET was investigated. It is found that the higher boron dose in combination with a retrograde well and large angle tilted LDD implantation process, can improve the reverse short channel effect, drain drive current and hot carrier reliability. The higher boron pocket implant is also found to be beneficial to ESD robustness
Keywords :
CMOS integrated circuits; VLSI; circuit optimisation; electrostatic discharge; elemental semiconductors; hot carriers; integrated circuit reliability; ion implantation; silicon; CMOS technology; ESD robustness; Si:B; deep sub-micron NMOSFET process; drain drive current; hot carrier reliability; large angle tilted LDD implantation; pocket implantation; retrograde well; reverse short channel effect; Boron; CMOS process; CMOS technology; Electrostatic discharge; Hot carriers; Implants; Impurities; MOSFET circuits; Robustness; Very large scale integration;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.500071
