• DocumentCode
    1672307
  • Title

    Stability in growth of 6H-SiC and 3C-SiC for LEDs and solar cells

  • Author

    Jokubavicius, Valdas ; Liljedahl, Rickard ; Yakimova, Rositza ; Syväjärvi, Mikael

  • Author_Institution
    Dept. of Phys., Chem. & Biol., Linkoping Univ., Linköping, Sweden
  • fYear
    2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    6H- and 3C-SiC layers were grown using a sublimation based process. The polytype balance is mainly given by the substrate orientation and growth temperature. This paves the way to use 6H- and 3C-SiC in optoelectronic applications.
  • Keywords
    epitaxial growth; light emitting diodes; semiconductor growth; silicon compounds; solar cells; sublimation; substrates; wide band gap semiconductors; 3C-SiC growth; 6H-SiC growth; LED; SiC; growth temperature; optoelectronic applications; polytype balance; solar cells; sublimation based process; substrate orientation; Boron; Nitrogen; Photovoltaic cells; Silicon carbide; Substrates; Thermal stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2012 Conference on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-4673-1839-6
  • Type

    conf

  • Filename
    6326368
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1672307