Title :
0.2 μm LDD NMOSFETs fabricated by conventional optical lithography
Author :
Zhang, Jinshu ; Lo, T.C. ; Tsien, Peihsin
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong
Abstract :
To improve the performance and reliability of deep sub micron MOSFETs, we propose an innovative non-planar LDD structure which can be fabricated by conventional optical lithography and plasma etching without using e-beam lithography. The proposed structure overcomes the trade-off between short channel effects and hot carrier effects which are most important in deep sub-micron devices, and retains the high current driving ability
Keywords :
MOSFET; photolithography; semiconductor technology; sputter etching; 0.2 micron; LDD NMOSFET; current driving; deep sub micron device; fabrication; hot carrier effects; nonplanar structure; optical lithography; plasma etching; reliability; short channel effects; Boron; Doping profiles; Etching; Implants; Lithography; MOSFET circuits; Optical device fabrication; Oxidation; Plasma applications; Threshold voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.500075
